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2002”N
1) H. Umezawa, T. Arima, N. Fujihara, H. Taniuchi, H. Ishizaka, M. Tachiki, C. Wild, P. Koidl, H. Kawarada "RF Performance of high transconductance and high-channel-mobility surface-chanel polycrystalline diamond metal-insulatpr-semiconductor field-effect transistors", Jpn. J. Appl. Phys., 41, 2611-2614 (2002)
2) T. Fujisaki, M. Tachiki, N. Taniyama, M. Kudo, H. Kawarada "Fabrication of Heteroeptaxial Diamond Thin Films on Ir(001)/MgO(001) Substrates using Antenna-Edge-Type Microwave Plasma-Assisted Chemical Vapor Deposition", Diam. Relat. Mater., 11, 478-481 (2002)
3) T. Sakai, Y. Araki, H. Kanazawa, H. Umezawa, M. Tachiki, H. Kawarada "Effect of Cl- Ionic Solutions on Electrolyte-Solution-Gate Diamond Field-Effect Transistors", Jpn. J. Appl. Phys., 41, 2595-2597 (2002)
4) K. Sugata, M. Tachiki, T. Fukuda, H. Seo, H. Kawarada "Nanoscale Modification of the Hydrogen-Terminated Diamond Surface using Atomic Force Microscope", Jpn. J. Appl. Phys., 41, 4983-4986 (2002)
5) H. Seo, M. Tachiki, T. Banno, Y. Sumikawa, H. Umezawa, H. Kawarada "Investigation of Current-Voltage Characteristics of Oxide Region induced by Atomic Force Microscope on Hydrogen-Terminated Diamond Surface", Jpn. J. Appl. Phys., 41, 4980-4982 (2002)
6) M. Tachiki, H. Seo, T. Banno, Y. Sumikawa, H. Umezawa, H. Kawarada "Fabrication of Single-Hole Transistors on Hydrogenated Diamond Surface using Atomic Force Microscope", Appl. Phys. Lett., 81, 2854-2856 (2002)
7) H. Umezawa, H. Taniuchi, T. Arima, H. Ishizaka, N. Fujihara, Y. Ohba, M. Tachiki, H. Kawarada "High Performance Diamond Field-Effect Transistors on Hydrogen-Terminated Surface-Channel", IEEJ., C-122, 10-16 (2002)
8) T. Banno, M. Tachiki, H. Seo, H. Umezawa, H. Kawarada "Fabrication of Diamond Single Hole Transistor using AFM Anodization Process", Diam. Relat. Mater., 11, 387-391 (2002)
9) M. Tachiki, T. Fujisaki, N. Taniyama, M. Kudo, H. Kawarada "Heteroepitaxial Diamond Thin Film Growth on Ir(001)/MgO(001) Substrate by Antenna-Edge Plasma Assisted Chemical Vapor Deposition", J. Cryst. Growth, 237, 1277-1280 (2002)
10) H. Ishizaka, H. Umezawa, H. Taniuchi, T. Arima, N. Fujihara, M. Tachiki, H. Kawarada "DC and RF Characteristics of 0.7-ƒÊm-Gate-Length Diamond Metal-Insulator-semiconductor Field-Effect Transistor", Diam. Relat. Mater., 11, 378-381 (2002)
11) H. Umezawa, H. Taniuchi, H. Ishizaka, T. Arima, N. Fujihara, M. Tachiki, H. Kawarada "RF Performance of Diamond MISFETs", IEEE Electr. Device L., 23, 121-123 (2002)
12) ”~‘ò mC’J“à Š°’¼C—L”n ‘ñ–çCÎâ ”Ž–¾C“¡Œ´ ’¼Ž÷C‘å’ë —_Žm˜aC—§–Ø ŽÀC쌴“c —m "…‘fI’[ƒ_ƒCƒ„ƒ‚ƒ“ƒh•\–Ê“`“±‘w‚ð—˜—p‚µ‚½‚«”\“dŠEŒø‰Êƒgƒ‰ƒ“ƒWƒXƒ^", “d‹CŠw‰ï˜_•¶ŽCi“d‹CEî•ñEƒVƒXƒeƒ€•”–åŽj, 122-C, 10-16 (2002) iµ‘Ò˜_•¶j
13) M. Tachiki, T. Fujisaki, N. Taniyama, M. Kudo, H. Kawarada "Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition (St. Elmo CVD)", New Diam. Front. C. Tech., 12, 6, 333-341 (2002)
14) H. Taniuchi, H. Umezawa, H. Ishizaka, H. Kawarada "Microwave performance of diamond field-effect transistors", J.J.A.P., PART 1, 41, 4B, 2591-2594 (2002)
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