1998年

1) K. Tsugawa, H. Noda, A. Hokazono, K. Kitatani, K. Morita, H. Kawarada "Application and devece modeling of diamond FET using surface semiconductive layers", Trans. Inst. Elec., Information and Communication Engineers, C-II, J81, 172 (1998)

2) H. Kawarada, C. Wild, N. Herres, P. Koidll, Y. Mizuochi, A. Hokazono H .Nagasawa "Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined beta-SiC (001) surfaces", Appl. Phys. Lett., 72, 1878 (1998)

3) K. Tsugawa, A. Hokazono, H. Noda, K. Kitatani, K. Morita, H. Kawarada "MESFETs and MOSFETs on hydrogen-terminated diamond surfaces", Materials Science Forum, 264, 977 (1998)

4) K. Tsugawa, H. Noda, A. Hokazono, K. Kitatani, K. Morita, H. Kawarada "Application and device modeling of diamond FET using surface semiconductive layers", Elec. Comm. in Japan Part 2, 81, 19 (1998)

5) 川原田洋 "ダイヤモンド電界効果トランジスタの現状と将来", 応用物理, 67, 128 (1998)

6) K. Tsugawa, K. Kitatani, H. Kawarada "Metal-semiconductor field-effect transistors on hydrogen-terminated diamond surfaces", Diam. Films Tech., 8, 4, 289-297 (1998)

7) K. Tsugawa, H. Noda, A. Hokazono, K. Kitatani, K. Morita, H. Kawarada "Application and device modeling of diamond FET using surface semiconductive layers", Elect. Comm. Jpn., PART II, 81, 7, 19-27 (1998)