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Research on Nano Carbon Devices:

Due to its extreme properties, diamond and carbon nanotube are expected to be applied in the ultimate semiconductor devices in high power, high frequency operation and highly integration. However, its progress as an active device has been slow because there has been no doping technology developed to realize its high electrical conductance. In diamond, we focused on surface accumulation layer appearing on a hydrogen terminated diamond surface and developed surface channel field effect transistors (FETs). This type of FET is applicable in high-frequency devices operating at high power, in-plane-gate FETs for nanoelectronics, and biosensors in electrolyte solution. We are also investigating carbon nanotube for the multi layer interconnection for the next generation ULSI.